• 山内和人*
    精密工学会誌,80 (2014) 47-51

  • A. N. Hattori*, K. Hattori, Y. Morikawa, A. Yamamoto, S. Sadakuni, J. Murata, K. Arima, Y. Sano, K. Yamauchi, H. Daimon, and K. Endo
    "Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments"
    Japanese Journal of Applied Physics, 53 (2014) 021001

  • 松山智至*
    日本放射光学会誌,27 (2014) 39-46

  • A. Suzuki, S. Furutaku, K. Shimomura, K. Yamauchi, Y. Kohmura, T. Ishikawa, and Y. Takahashi*
    "High-resolution Multi-slice X-ray Ptychography of Extended Thick Objects"
    Physical Review Letters, 112 (2014) 053903
    Press release (Japanese)

  • K. Tamasaku*, E. Shigemasa, Y. Inubushi, T. Katayama, K. Sawada, H. Yumoto, H. Ohashi, H. Mimura, M. Yabashi, K. Yamauchi, and T. Ishikawa
    "X-ray two-photon absorption competing against single and sequential multiphoton processes"
    Nature Photonics, 8 (2014) 313-316
    Press release (Japanese)

  • A. Isohashi*, Y. Sano, S. Sadakuni, and K. Yamauchi
    "4H-SiC planarization using catalyst-referred etching with pure water"
    Materials Science Forum, 778-780 (2014) 722-725

  • P. V. Bui*, K. Inagaki, Y. Sano, K. Yamauchi, and Y. Morikawa
    "Investigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching Process"
    Materials Science Forum, 778-780 (2014) 726-729

  • Y. Okada*, H. Nishikawa, Y. Sano, K. Yamamura, and K. Yamauchi
    "Thinning of a two-inch silicon carbide wafer by plasma chemical vaporization machining using a slit electrode"
    Materials Science Forum, 778-780 (2014) 750-753

  • Y. Sano*, H. Nishikawa, Y. Okada, K. Yamamura, S. Matsuyama, and K. Yamauchi
    "Dicing of SiC wafer by atmospheric-pressure plasma etching process with slit mask for plasma confinement"
    Materials Science Forum, 778-780 (2014) 759-762

  • W. Yamaguchi*, S. Sadakuni, A. Isohashi, H. Asano, Y. Sano, M. Imade, M. Maruyama, M. Yoshimura, Y. Mori, and K. Yamauchi
    "Planarization of the gallium nitride substrate grown by the Na flux method applying catalyst-referred etching"
    Materials Science Forum, 778-780 (2014) 1193-1196

  • H. Mimura*, H. Yumoto, S. Matsuyama, T. Koyama, K. Tono, Y. Inubushi, T. Togashi, T. Sato, J. Kim, R. Fukui, Y. Sano, M. Yabashi, H. Ohashi, T. Ishikawa, and K. Yamauchi
    "Generation of 1020 W/cm2 Hard X-ray Laser Pulses with Two-Stage Reflective Focusing System"
    Nature Communications, 5 (2014) 3539
    Media release (Japanese)

  • R. Xu, H. Jiang, C. Song, J. A. Rodriguez, Z. Huang, C.-C. Chen, D. Nam, J. Park, M. Gallagher-Jones, Sangsoo Kim, Sunam Kim, A. Suzuki, Y. Takayama, T. Oroguchi, Y. Takahashi, J. Fan, Y. Zou, T. Hatsui, Y. Inubushi, T. Kameshima, K. Yonekura, K. Tono, T. Togashi, T. Sato, M. Yamamoto, M. Nakasako, M. Yabashi, T. Ishikawa, and J. Miao*
    "Single-shot three-dimensional structure determination of nanocrystals with femtosecond X-ray free-electron laser pulses"
    Nature Communications, 5 (2014) 4061

  • T. K. Doi*, Y. Sano, S. Kurokawa, H. Aida, O. Ohnishi, M. Uneda, and K. Ohyama
    "Novel Chemical Mechanical Polishing/Plasma-Chemical Vaporization Machining (CMP/P-CVM) Combined Processing of Hard-to-Process Crystals Based on Innovative Concepts"
    Sensors and Materials, 26 (6) (2014) 403-415

  • Y. Sano*, T. K. Doi, S. Kurokawa, H. Aida, O. Ohnishi, M. Ueda, K. Shiozawa, Y. Okada, and K. Yamauchi
    "Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage"
    Sensors and Materials, 26 (6) (2014) 429-434

  • H. Yoneda*, Y. Inubushi, M. Yabashi*, T. Katayama, T. Ishikawa, H. Ohashi, H. Yumoto, K. Yamauchi, H. Mimura, and H. Kitamura
    "Saturable absorption of intense hard X-rays in iron"
    Nature Communications, 5 (2014) 5080

  • N. Saito, D. Mori, A. Imafuku, K. Nishitani, H. Sakane, K. Kawai, Y. Sano, M. Morita, and K. Arima*
    "Aggregation of Carbon Atoms on SiO2/SiC(0001) Interface by Plasma Oxidation toward Formation of Pit-free Graphene"
    Carbon, 80 (2014) 440-445

  • N. Saito, D. Mori, A. Imafuku, K. Kawai, Y. Sano, M. Morita, and K. Arima*
    "Behaviors of Carbon Atoms during Plasma Oxidation of 4H-SiC(0001) Surfaces near Room Temperature"
    ECS Transactions, 64(17) (2014) 23-28

  • 鈴木明大, 高橋幸生
    Isotope News, 725 (2014) 12-14

  • S. Matsuyama*, Y. Emi, H. Kino, Y. Kohmura, M. Yabashi, T. Ishikawa, and K. Yamauchi
    "Development of achromatic full-field hard x-ray microscopy and its application to x-ray absorption near edge structure spectroscopy"
    Proceedings of SPIE, 9207 (2014) 92070Q

  • T. Goto, S. Matsuyama*, H. Nakamori, T. Kimura, Y. Sano, Y. Kohmura, K. Tamasaku, M. Yabashi, T. Ishikawa, and K. Yamauchi
    "Development of a one-dimensional two-stage focusing system with two deformable mirrors"
    Proceedings of SPIE, 9208 (2014) 920802

  • T. Osaka*, T. Hirano, M. Yabashi, Y. Sano, K. Tono, Y. Inubushi, T. Sato, K. Ogawa, S. Matsuyama, T. Ishikawa, and K. Yamauchi
    "Development of split-delay x-ray optics using Si(220) crystals at SACLA"
    Proceedings of SPIE, 9210 (2014) 921009

  • Y. Sano*, T. Doi, S. Kurokawa, H. Aida, O. Ohnishi, M. Uneda, Y. Okada, H. Nishikawa, and K. Yamauchi
    "Basic Study on Etching Selectivity of Plasma Chemical Vaporization Machining by Introducing Crystallographic Damage into Work Surface"
    Key Engineering Materials, 625 (2014) 550-553

bold: authors who belong to Yamauchi Lab., *: corresponding author(s)